ENGINEERING APPROACH TO MODELLING FRE- QUENCY DISPERSION WITHIN NORMAL METALS AT ROOM TEMPERATURE FOR THz APPLICATIONS

When compared to the over-simplified classical skin-effect model, the accurate classical relaxation-effect modelling approach for THz structures at room temperature can be mathematically cumbersome and not insightful. This paper introduces various interrelated electrical engineering concepts as tools for characterizing the intrinsic frequency dispersive nature of normal metals at room temperature. This engineering approach dramatically simplifies the otherwise complex analysis and allows for a much deeper insight to be gained into the classical relaxation-effect model. For example, it explains how wavelength can increase proportionally with frequency at higher terahertz frequencies. This is the first time that such an approach has been developed for the modelling of intrinsic frequency dispersion within a metal. While the focus has been on the characterization of normal metals (magnetic and non-magnetic) at room temperature, it is believed that the same methodology may be applied to metals operating in anomalous frequency-temperature regions, superconductors, semiconductors, carbon nanotubes and metamaterials.